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SRFET
AO4714 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4714 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.7m (VGS = 10V) RDS(ON) < 6.7m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G S
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain F Current Pulsed Drain Current B TA=25C Power Dissipation F Avalanche Current B Repetitive avalanche energy L=0.3mH
B
Maximum 30 20 20 16 100 3.0 2.0 30 135 -55 to 150
Units V V A A W A mJ C Max 41 75 24 Units C/W C/W C/W
TA=25C TA=70C IDSM IDM PDSM IAR EAR
TA=70C
TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead
Symbol RJA RJL
Typ 31 59 16
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4714
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1.2 100 3.9 5.9 5.4 90 0.36 0.5 6 3760 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 682 314 0.75 62 VGS=10V, VDS=15V, ID=20A 29 12 12 9.5 VGS=10V, V DS=15V, R L=0.75, RGEN=3 IF=20A, dI/dt=300A/s IF=20A, dI/dt=300A/s 8.5 34 9 18 22 27 1.5 74 35 nC nC nC ns ns ns ns ns nC 4512 4.7 7.3 6.7 1.5 Min 30 0.1 20 0.1 2.2 Typ Max Units V mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R and lead to ambient. JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. F. The power dissipation and current rating is based on the t 10s junction to ambient thermal resistance rating. Rev1: Feb. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4714
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 175 150 125 ID (A) 100 75 50 25 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 8 7 RDS(ON) (m) 6 5 4 3 2 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 ID=20A 8 RDS(ON) (m) 125C IS (A) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=10V VGS=4.5V Normalized On-Resistance 1.8 VGS=10V 1.6 1.4 1.2 1 0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=4.5V ID=16A VGS=3V ID(A) 3.5V 10V 7V 5V 4.5V 6V 4V 25 20 15 10 25C 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 30 VDS=5V
6
4
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4714
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 12000 10000 Capacitance (pF) VDS=15V ID=20A 8000 6000 4000 Crss 2000 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
1000.0 TJ(Max)=150C TA=25C 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 RDS(ON) limited 10s 100 1ms 0.1s 1s
100 90 80 70 Power (W) 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 TJ(Max)=150C TA=25C
10s DC
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=41C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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